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1 MRF5S21130R3 mrf5s21130sr3 motorola rf device data the rf mosfet line rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for w - cdma base station applications at frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n - p c s / c e l l u l a r r a d i o a n d w l l applications. ? typical 2 - carrier w - cdma performance for v dd = 28 volts, i dq = 1200 ma, f1 = 2135 mhz, f2 = 2145 mhz, channel bandwidth = 3.84 mhz, adjacent channels measured over 3.84 mhz bw @ f1 - 5 mhz and f2 +5 mhz, distortion products measured over a 3.84 mhz bw @ f1 - 10 mhz and f2 +10 mhz, peak/avg. = 8.5 db @ 0.01% probability on ccdf. output power ? 28 watts avg. power gain ? 13.5 db efficiency ? 26% im3 ? - 37 dbc acpr ? - 39 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 2140 mhz, 92 watts cw output power ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? qualified up to a maximum of 32 v dd operation ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain - source voltage v dss 65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 315 2 watts w/ c storage temperature range t stg - 65 to +150 c operating junction temperature t j 200 c cw operation cw 92 watts thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 80 c, 92 w cw case temperature 80 c, 28 w cw r jc 0.54 0.56 c/w (1) mttf calculator available at http://www.motorola.com/semiconductors/rf . select tools/software/application software/calculators to access the mttf calculators by product. (2) refer to an1955/d, thermal measurement methodology of rf power amplifiers. go to http://www.motorola.com/semiconductors/rf . select documentation/application notes - an1955. note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by mrf5s21130/d motorola semiconductor technical data MRF5S21130R3 mrf5s21130sr3 2170 mhz, 28 w avg., 2 x w - cdma, 28 v lateral n - channel rf power mosfets case 465c - 02, style 1 ni - 880s mrf5s21130sr3 case 465b - 03, style 1 ni - 880 MRF5S21130R3 ? motorola, inc. 2004 rev 2 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S21130R3 mrf5s21130sr3 2 motorola rf device data esd protection characteristics test conditions class human body model 2 (minimum) machine model m4 (minimum) charge device model c7 (minimum) electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 300 adc) v gs(th) 2.5 2.7 3.5 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1200 madc) v gs(q) ? 3.7 ? vdc drain - source on - voltage (v gs = 10 vdc, i d = 3 adc) v ds(on) ? 0.26 0.3 vdc forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs ? 7.5 ? s dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.6 ? pf functional tests (in motorola test fixture, 50 ohm system) 2 - carrier w - cdma, 3.84 mhz channel bandwidth carriers, acpr and im3 measured in 3.84 mhz bandwidth. peak/avg. = 8.5 db @ 0.01% probability on ccdf. common - source amplifier power gain (v dd = 28 vdc, p out = 28 w avg., i dq = 1200 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 12 13.5 ? db drain efficiency (v dd = 28 vdc, p out = 28 w avg., i dq = 1200 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 24 26 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 28 w avg., i dq = 1200 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; im3 measured over 3.84 mhz bw at f1 - 10 mhz and f2 +10 mhz referenced to carrier channel power.) im3 -37 -35 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 28 w avg., i dq = 1200 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; acpr measured over 3.84 mhz at f1 - 5 mhz and f2 +5 mhz.) acpr ? -39 -37 dbc input return loss (v dd = 28 vdc, p out = 28 w avg., i dq = 1200 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) irl ? -12 -9 db (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
3 MRF5S21130R3 mrf5s21130sr3 motorola rf device data r1 v bias z7 rf input z9 c15 + c20 c11 + c13 + v supply rf output dut c1 c3 r2 c9 c5 c10 c6 z6 z10 c8 c7 z1 z2 z3 z4 z5 z11 z16 z15 z14 z13 z12 z8 c17 c18 c19 c16 + c12 + c14 c2 + c4 + figure 1. mrf5s21130 test circuit schematic z9, z10 0.709 x 0.083 microstrip z11 0.415 x 1.000 microstrip z12 0.531 x 0.083 microstrip z13 0.994 x 0.083 microstrip z14, z15 0.070 x 0.220 microstrip z16 0.430 x 0.083 microstrip pcb taconic tlx8, 0.030 , r = 2.55 z1 0.500 x 0.083 microstrip z2 0.995 x 0.083 microstrip z3 0.905 x 0.083 microstrip z4 0.159 x 1.024 microstrip z5 0.117 x 1.024 microstrip z6, z7 0.749 x 0.083 microstrip z8 0.117 x 1.000 microstrip table 1. mrf5s21130 test circuit component designations and values part description value, p/n or dwg manufacturer c1, c2, c13, c14, c15, c16 10 f, 35 v tantalum capacitors 293d1106x9035d vishay - sprague c3, c4, c11, c12 220 nf chip capacitors (1812) 1812y224kxa vishay - vitramon c5, c6, c7, c9, c10, c18, c19 6.8 pf 100b chip capacitors 100b6r8cw atc c8 0.1 pf 100b chip capacitor 100b0r1bw atc c17 0.5 pf 100b chip capacitor 100b0r5bw atc c20 220 f, 63 v electrolytic capacitor, radial 13668221 philips r1, r2 1 k , 1/4 w chip resistors f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S21130R3 mrf5s21130sr3 4 motorola rf device data figure 2. mrf5s21130 test circuit component layout mrf5s21130 c1 r1 r2 c7 c8 c3 c5 c4 c6 c9 c11 c13 c15 c10 c12 c14 c16 c17 c19 c18 c20 c2 cut out area rev 0 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5 MRF5S21130R3 mrf5s21130sr3 motorola rf device data typical characteristics 2220 2060 irl g ps acpr im3 f, frequency (mhz) figure 3. 2 - carrier w - cdma broadband performance im3 (dbc), acpr (dbc) g ps , power gain (db) , drain ?30 ?10 ?15 ?20 ?25 input return loss (db) irl, v dd = 28 vdc, p out = 28 w (avg.), i dq = 1200 ma 2?carrier w?cdma, 10 mhz carrier spacing, 3.84 mhz channel bandwidth, peak/avg. = 8.5 db @ 0.01% probability (ccdf) 2200 2180 2160 2140 2120 2100 2080 6 14 13 12 11 10 9 8 7 ?44 35 30 25 20 ?28 ?32 ?36 ?40 efficiency (%) 1000 11 15 1 i dq = 1600 ma 1400 ma p out , output power (watts) pep figure 4. two - tone power gain versus output power g ps , power gain (db) v dd = 28 vdc f1 = 2135 mhz, f2 = 2145 mhz two?tone measurement, 10 mhz tone spacing 800 ma 1200 ma 1000 ma 10 100 14.5 14 13.5 13 12.5 12 11.5 1000 ?65 ?25 1 p out , output power (watts) pep figure 5. third order intermodulation distortion versus output power im3, third order intermodulation distortion (dbc) 100 10 ?30 ?35 ?40 ?45 ?50 ?55 ?60 1000 ma 800 ma i dq = 1600 ma 1200 ma 1400 ma v dd = 28 vdc f1 = 2135 mhz, f2 = 2145 mhz two?tone measurement, 10 mhz tone spacing 100 ?60 ?25 0.1 two?tone spacing (mhz) figure 6. intermodulation distortion products versus tone spacing intermodulation distortion (dbc) imd, 110 ?30 ?35 ?40 ?45 ?50 ?55 50 58 35 ideal p1db = 52.5 dbm (178 w) actual p in , input power (dbm) figure 7. pulse cw output power versus input power p out , output power (dbm) v dd = 28 vdc, i dq = 1200 ma pulsed cw, 5 sec(on), 1 msec(off) center frequency = 2140 mhz p3db = 53.02 dbm (200.5 w) 57 56 55 54 53 52 51 37 39 41 43 45 v dd = 28 vdc, p out = 130 w (pep), i dq = 1200 ma two?tone measurements, center frequency = 2140 mhz 3rd order 5th order 7th order f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S21130R3 mrf5s21130sr3 6 motorola rf device data typical characteristics 20 515 10 0 ?5 ?10 ?15 ?20 ?25 25 0 35 5 ?55 ?20 g ps acpr p out , output power (watts) avg. (w?cdma) figure 8. 2 - carrier w - cdma acpr, im3, power gain and drain efficiency versus output power im3 (dbc), acpr (dbc) , drain efficiency (%), g ps , power gain (db) 10 15 20 25 30 35 40 45 30 ?25 25 ?30 20 ?35 15 ?40 10 ?45 5 ?50 im3 figure 9. 2-carrier w-cdma spectrum f, frequency (mhz) ?110 ?120 ?70 ?20 ?80 ?60 ?50 (db) ?90 ?100 ?40 ?30 3.84 mhz channel bw ?im3 @ 3.84 mhz bw +im3 @ 3.84 mhz bw ?acpr @ 3.84 mhz bw +acpr @ 3.84 mhz bw 10 0.0001 100 0 peak?to?average (db) figure 10. ccdf w - cdma 3gpp, test model 1, 64 dpch, 67% clipping, single carrier test signal probability (%) 10 1 0.1 0.01 0.001 2468 v dd = 28 vdc, i dq = 1200 ma, f1 = 2135 mhz, f2 = 2145 mhz, 2 x w?cdma, 10 mhz @ 3.84 mhz bandwidth, peak/avg. = 8.5 db @ 0.01% probability (ccdf) 220 10 9 100 t j , junction temperature ( c) figure 11. mtbf factor versus junction temperature mtbf factor (hours x amps ) 2 this above graph displays calculated mtbf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mtbf factor by i d 2 for mtbf in a particular application. 10 8 10 7 10 6 120 140 160 180 200 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7 MRF5S21130R3 mrf5s21130sr3 motorola rf device data figure 12. series equivalent input and output impedance f mhz z source ? z load ? 2080 2110 2140 1.51 - j2.97 1.59 - j2.68 1.52 - j2.54 2.87 - j9.49 3.13 - j9.86 4.05 - j10.90 v dd = 28 vdc, i dq = 1200 ma, p out = 28 w avg. z o = 25 ? z load * f = 2080 mhz f = 2200 mhz z source f = 2080 mhz f = 2200 mhz 2170 2200 1.54 - j3.13 1.62 - j2.70 4.80 - j11.75 5.55 - j11.87 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S21130R3 mrf5s21130sr3 8 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
9 MRF5S21130R3 mrf5s21130sr3 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S21130R3 mrf5s21130sr3 10 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
11 MRF5S21130R3 mrf5s21130sr3 motorola rf device data package dimensions case 465b - 03 issue b ni - 880 MRF5S21130R3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. 4. deleted dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.535 0.545 13.6 13.8 c 0.147 0.200 3.73 5.08 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.871 0.889 19.30 22.60 q .118 .138 3.00 3.51 r 0.515 0.525 13.10 13.30 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h f q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) s m a m aaa b m t (insulator) r m a m ccc b m t (lid) s 0.515 0.525 13.10 13.30 m 0.872 0.888 22.15 22.55 aaa 0.007 ref 0.178 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref case 465c - 02 issue a ni - 880s mrf5s21130sr3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.905 0.915 22.99 23.24 b 0.535 0.545 13.60 13.80 c 0.147 0.200 3.73 5.08 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.871 0.889 19.30 22.60 r 0.515 0.525 13.10 13.30 style 1: pin 1. drain 2. gate 3. source 1 seating plane 2 d k c e h f m a m bbb b m t b b (flange) m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator) s 0.515 0.525 13.10 13.30 m 0.872 0.888 22.15 22.55 bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.007 ref 0.178 ref f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S21130R3 mrf5s21130sr3 12 motorola rf device data information in this document is provided solely to enable system and software implementers to use motorola products. there are no express or i mplied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in th is document. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?t ypical? parameters that may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer s hall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent and t rademark office. all other product or service names are the proper ty of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola inc. 2004 how to reach us: usa / europe / locations not listed : japan : motorola japan ltd.; sps, technical information center, motorola literature distribution 3 - 20 - 1, minami - azabu, minato - ku, tokyo 106 - 8573, japan p.o. box 5405, denver, colorado 80217 81-3- 3440 - 3569 1 - 800 - 521 - 6274 or 480 - 768 - 2130 asia / pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industria l estate, tai po, n.t., hong kong 852 - 26668334 home page : http://motorola.com/semiconductors mrf5s21130/d ? f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .

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